LB120A
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN TRIPLE DIFFUSED PLANAR TRANSISTOR
Pinning
1 = Emitter
2 = Collector
3 = Base
Description
Designed for use in high-voltage switching
applications.
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Volatge
BV
CBO
600
-
-
V
I
C
=100
A, I
E
=0
Collector-Emitter Breakdown Voltage
BV
CEO
400
-
-
V
I
C
=10mA, I
B
=0
Emitter-Base Breakdown Volatge
BV
EBO
5
-
-
V
I
E
=10
A, I
C
=0
Collector Cutoff Current
I
CBO
-
-
10
A
V
CB
=550V, I
E
=0
I
CEO
-
-
10
A
V
CE
=400V, I
B
=0
Emitter Cutoff Current
I
EBO
-
-
10
A
V
EB
=6V, I
C
=0
Collector-Emitter Saturation Voltage
(1)
V
CE(sat)1
-
-
0.4
V
I
C
=50mA, I
B
=10mA
V
CE(sat)2
-
-
0.75
V
I
C
=100mA, I
B
=20mA
Base-Emitter Saturation Voltage
(1)
V
BE(sat)
-
-
1
V
I
C
=50mA, I
B
=10mA
DC Current Gain
(1)
h
FE1
8
-
-
-
I
C
=10mA, V
CE
=10V
h
FE2
10
-
36
-
I
C
=50mA, V
CE
=10V
Electrical Characteristics
(Ratings at 25
o
C ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width
380
s, Duty Cycle
2%
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)
Typ
.050
(1.27)
Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)
Min
2
o
Typ
5
o
Typ.
2
o
Typ
3 2 1
5
o
Typ.
Dimensions in inches and (millimeters)
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
V
CBO
600
V
Collector-Emitter Voltage
V
CEO
400
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current (DC)
I
C
100
mA
Collector Current (pulse)
I
C
200
mA
Base Current (DC)
I
B
20
mA
Base Current (pulse)
I
B
40
mA
Total Power Dissipation
P
D
0.8
W
Total Power Dissipation(T
C
=25
o
C)
P
D
7
W
Junction Temperature
T
J
+150
o
C
Storage Temperature
T
STG
-55 to +150
o
C
Absolute Maximum Ratings
(T
A
=25
o
C)
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